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Semiconductor Analyzer

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Original price was: $130.23.Current price is: $78.13.

Category:
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Brand : Unbranded
Power Source : Battery Powered
MPN : Details_In_Description
UPC : Does not apply
Color : Black And Blue
Style : Standard
gtin13 : Does not apply
Item Weight : 2 Ounces
Product Dimensions : 4 X 0.5 X 2.75 Inches; 2 Ounces
Batteries : 1 Aaa Batteries Required. (included)

Semiconductor Analyzer Automatic component identification automatic identification of connection pins identification of special features such as detection of protection diodes and detection of shunt resistors bipolar transistors: measurement of current gain and leakage current, silicon and germanium diode detection threshold voltage measurement for enrichment MOSFETs forward voltage measurement for diodes, LEDs and base-emitter junctions of transmissions istors exti Specification Summary at 20°C (68°F) unless otherwise specified Short circuit peak current cut: mA up to mA Permanent short circuit peak voltage: V up to V Transistor: *** FEATURES: automatic identification of components automatic identification of connection pins identification of special features such as detection of protection diodes and detection of shunt resistors bipolar transistors: measurement of current gain and leakage current, silicon and germanium diode detection threshold voltage measurement for enrichment MOSFETs forward voltage measurement for diodes, LEDs and base-junctions Transistor transmitter automatic and manual extinguishing *** SPECIFICATIONS: Specification Summary at 20°C (68°F) unless otherwise specified short circuit peak current cut off: mA up to mA Permanent short circuit peak voltage: V up to V transistor: gain range (HFE): 4 – 65,000 Gain precision: ± 3% ± 5 Hfe maximum collector-to-emitter voltage (VCEO): V – V base-emitter voltage accuracy VBE: -2% -20 mV up to +2% + 20 mV base-emitter voltage VBE for Darlington transistor (shunted): V – V ( 75 V – V) base-emitter shunt resistance threshold: 50 kΩ – 70 kΩ collector current BJT: mA – mA acceptable leakage current BJT: mA MOSFET: gate-source voltage range: V – V accuracy of only he: -2% -20 mV up to +2% + 20 mV drain current: mA – 255 mA gate resistance: 8 kΩ depletion drain current: mA drain-source currents JFET: mA – mA thyristor/Triac: gate current: mA Hold: mA diode: test current: mA voltage accuracy: -2% -20 mV up to +2% + 20 mV forward voltage for LED identification: V – V short-circuit threshold: 10 Ω battery: type: MN21 / L1028 / GP23A 12 V alkaline range. Voltage: 7. 50 V – 12 V alarm threshold: V. Dimensions: 103 x 70 x 20 mm ( x x inches). Weight per product (nett): kg ( oz). Working temperature: 0 °C ~ 50 °C (32F ~ 122F)

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